Abstract
The quantum efficiency (QE) in HgCdTe photovoltaic pixel arrays employing a photon-trapping (PT) structure realized with a periodic array of pillars intended to provide broadband operation was investigated. It was found that the QE depends heavily on the passivation of the pillar surface. This is due to the presence of large fixed positive charge on the surface of pillars passivated with anodic oxide. A three-dimensional numerical simulation model was used to study the effect of the surface charge density and surface recombination velocity on the exterior of the pillars. Then, the QE of this structure was evaluated subject to different surface conditions. It was found that alone the surface charge density or surface recombination is detrimental to the QE but that the QE is recovered when both phenomena are present. Subsequently, the crosstalk was analyzed and the superior performance of the PT structure was demonstrated by evaluating the modulation transfer function.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
