Abstract
We have employed Spectroscopic Ellipsometry (SE) as a measurement technology to non‐destructively and simply measure pre‐amorphous layers made by ion implantation. In this paper, we examine the differences between amorphous film thickness measured by cross‐section‐TEM and SE, aiming at a highly precise evaluation of pre‐amorphous layers created during shallow junction formation at energies below 10 keV. Our data indicates that the amorphous layer thickness measured with SE also includes a portion of the heavily‐damaged crystal near the amorphous‐crystal interface, where EOR defects are located after annealing. For example, thickness of amorphous layers formed by helium in plasma doping tools can be measured with this technology.
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