Abstract
This study reports the evaluation of an optical waveguide fabricated on a bulk-Si platform by using an epitaxially grown Si layer. The epitaxial growth of Si is obtained by the solid phase epitaxy (SPE) using a hot furnace annealing method. It is observed that an optical propagation loss of the waveguide decreases with increasing the epitaxially grown area in the waveguide. In this study, an epitaxial growth rate is greatly enhanced by an (100) growth orientation due to the lower atomic close packing density along the (100) orientation. The optical propagation loss is also improved with the (100) growth orientation because of the higher crystalline quality and full epitaxial growth of Si.
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