Abstract
The thin film of prepared bulk material Sn19Se76Bi2Te3 has been deposited on a pre-cleaned glass substrate employing vacuum thermal deposition technique. Optical study of the prepared thin film has been done with the help of UV/VIS/NIR transmission spectroscopy. By using Swanepoel envelope method,the parameters like refractive index (n), absorption coefficient (α), extinction coefficient (k), real and imaginary dielectric constants (εr& εi) of the film have been determined. The optical band gap (Egopt) is indirectand estimated using Tauc relation. The effect of photon energy (hν) on the dissipation factor tan(δ) has been studied and found to increase with the increase in photon energy. The low bandgap of Sn19Se76Bi2Te3 sample makes it a suitable candidate for the photoelectric and thermoelectric applications.
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