Evaluation of Optical Properties for Nanocrystal Si Dot Layers Fabricated by CVD as a Function of Size Reduction

Abstract

Raman spectroscopy and photoluminescence were performed in order to understand the optical properties of nanocrystal Si in relation to quantum confinement effects. The nanocrystal Si (nc-Si) dots in the SiO2 layer were fabricated by the H2 plasma treatment and chemical vapour deposition followed by the oxidation of the nc-Si dots surface. The post-annealing was also performed to improve the crystalline quality of nc-Si at 1050 °C for 5 and 10 min. There is a good correlation of the quantum confinement effects between the results of Raman spectroscopy and photoluminescence. The Raman spectra from nc-Si were analysed using the model of Richter et al. As a result, the sizes of the nc-Si dots were consistent with those obtained by transmission electron microscopy and X-ray diffraction. Moreover, the compressive stress in the nc-Si dots were evaluated which was induced by the SiO2 surroundings.