Abstract

In systems in atomic scale and nanoscale such as clusters or agglomerates constituted by particles from a few to less than 100 atoms, quantum confinement effects are very important. Their optical and electronic properties are often dependent on the size of the systems and the way in which the atoms in these clusters are bonded. Generally, these nanostructures display optical and electronic properties significantly different to those found in corresponding bulk materials. Silicon agglomerates embedded in silicon rich oxide (SRO) films have optical properties, which have been reported to be directly dependent on silicon nanocrystal size. Furthermore, the room temperature photoluminescence (PL) of SRO has repeatedly generated a huge interest due to its possible applications in optoelectronic devices. However, a plausible emission mechanism has not been widely accepted in the scientific community. In this work, we present a short review about the experimental results on silicon nanoclusters in SRO considering different techniques of growth. We focus mainly on their size, Raman spectra, and photoluminescence spectra. With this as background, we employed the density functional theory with a functional B3LYP and a basis set 6-31G* to calculate the optical and electronic properties of clusters of silicon (constituted by 15 to 20 silicon atoms). With the theoretical calculation of the structural and optical properties of silicon clusters, it is possible to evaluate the contribution of silicon agglomerates in the luminescent emission mechanism, experimentally found in thin SRO films.

Highlights

  • Small silicon clusters can be obtained, for instance, when using photochemical etching treatment and pulsed laser evaporation method which in turn show photoluminescence (PL)

  • On the other hand, following the line of nanostructures with Si clusters, we find that such structures which have generated great interest is the silicon rich oxide (SRO) thin film; this material exhibits optical properties in the same manner to porous Si (p-Si), but it is significantly less chemically reactive than p-Si

  • Amorphous silicon (a-Si) as well as crystalline silicon (c-Si) can be identified by Raman spectroscopy [35]

Read more

Summary

Introduction

Small silicon clusters can be obtained, for instance, when using photochemical etching treatment and pulsed laser evaporation method which in turn show photoluminescence (PL). Some silicon clusters have been prepared by organic synthesis methods, and a similarity of the PL and absorption spectra to those measured in porous Si (p-Si) has been pointed out. With respect to the latter material, it is currently agreed that the quantum confinement effects and the hydrogen saturation (surface effects) of Si nanocrystallites play key roles in the origin and mechanism of PL in p-Si where. On the other hand, following the line of nanostructures with Si clusters, we find that such structures which have generated great interest is the silicon rich oxide (SRO) thin film; this material exhibits optical properties in the same manner to p-Si, but it is significantly less chemically reactive than p-Si

Objectives
Methods
Results
Conclusion
Full Text
Published version (Free)

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call