Evaluation of non-linear modelling techniques for MOSFETs based on vectorial large-signal measurements

Abstract

Non-linear MOSFET models are mostly derived indirectly from DC, low-frequency C-V and/or high-frequency S-parameter measurements. We developed non-linear modelling techniques that determine the state functions of MOSFETs directly from high-frequency vectorial large-signal measurements and thus eliminate the small-signal detour. Two methods are proposed to determine these state functions: parameter optimisation and extraction. Both approaches yield accurate results. Hence, the main difference is the application range. The method of parameter optimisation quickly generates accurate non-linear models for particular applications, while the extraction method is preferred to determine general non-linear models.