Abstract
The exposure performance has been evaluated for the new x-ray stepper, the XRA, which is equipped with global alignment and magnification correction systems. Dose uniformity in the exposure field of 3.9%, stage accuracy of less than 20 nm, and good linearity and stability between the magnification change and applied force were obtained. For the 100 nm node, both critical dimension (CD) control of 10 nm and overlay accuracy of less than 30 nm were obtained using two 4 Gbit masks of the gate and contact hole by the double exposure method. Possible improvements of the dose uniformity and mask pattern CD will result in more accurate CD control. By compensating for the alignment offset, overlay accuracy of 23 nm for the 70 nm node is also expected.
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