Abstract
Conventional electron and hole transport materials for perovskites, such as TiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> and Spiro-OMeTAD, have been known to be susceptible to light induced degradation. Some studies have also suggested that the hysteresis effect observed in perovskite based devices could be correlated, in part, with light-induced defects at tio <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> /perovskite interface. In this study, several alternative electron and hole transport layers for planar solar cell devices based on CH <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> NH <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> PbI <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> perovskite were explored with SCAPS-1D simulations. Due to its tunable bandgap and high electron affinity, ZnOS has been shown as best replacement for TiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> . NiO and CsSnI <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> are good potential alternatives for Spiro-OMeTAD to address the stability issues.
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