Abstract
We evaluated and analyzed power SiC MOSFETs with gate switching mode during neutron irradiation with our commercial single event effect (SEE) Analyzer. Based on evaluation and analysis, we found i) difference of radiation robustness characteristics, ii) switching mode to be worse condition than non-switching (DC bias condition) mode for 1200 V rated SiC MOSFETs, and iii) temperature dependence with three manufactures’ SiC MOSFETs. In order to clarify the difference between the switching mode and non-switching mode effect, and between the electrical characteristics of the devices, we extracted device-related parameters through physical structure analysis and systematically investigated the cause of the difference by performing simulations with TCAD. As a result, we found that the distribution of electric field according to the gate structure and oxide thickness of SiC MOSFET affects to SiC MOSFET radiation robustness. It was also observed that one of the acceleration factors for increased cross section was higher temperature during irradiation test.
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