Abstract
Nanopipes in GaN, grown by MOCVD on c-plane (0 0 0 1) sapphire, were investigated by generating etch-pits. Well-defined etch-pits were found to form on the surface of GaN films, with aqueous solutions of H 3PO 4(85 mol%). Using optical microscopy, SEM, and TEM, the relationship between etch-pits and crystalline defects in GaN films was investigated. It was found that in GaN films etch-pits formed at the nanopipes and not at the threading dislocations. Therefore, wet chemical etching proves to be a simple and accurate method for determining the density and distribution of nanopipes in GaN films.
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