Abstract
This paper concerns the experimental evaluation of optical properties of a multilayer semiconductor structure by PAS using a transparent transducer method. The sample is a GaxIn1-xP(1.8 µm)/GaAs (380 µm)/Si(530 µm). Optical absorption edges of this sample are evaluated from PA amplitude and phase signals. Between two layers a sharp dip of the PA signal is observed which corresponds to the absorption edge. Generation mechanism of the PA dip is discussed in comparison with the phase delay of two signals.
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