Evaluation of micro-defects by DRAM data retention characteristics measurement

Abstract

The influence of micro-defects induced intentionally by Si + ion implantation was investigated using data retention characteristics of dynamic random access memory (DRAM). The defect formation was controlled by Si + implantation and subsequent annealing conditions. Micro-defects such as {311} defects having a size below 50 nm degraded the junction leakage current and data retention characteristics. Data retention characteristics was also affected by the existence of micro-defects such as point defect or its clusters, although the junction leakage current was low enough compared with unimplanted samples.