Abstract
ABSTRACT The metalorganic precursors to fabricate multiferroic BiFeO3 thin films by liquid-delivery metalorganic chemical vapor deposition were investigated. Among the evaluated compounds, the combinations of Bi(p-Tol)3 and iron β -diketonates were suitable to control the metal composition in BiFeO3 films. The films obtained using the precursor solution with the molar ratio of Bi:Fe = 1:1 included excess bismuth. The films with only BiFeO3 phase could be fabricated at the substrate temperatures of 500°C and 525°C by using the precursor solution of Bi(p-Tol)3 and Fe(IBPM)3 with the molar ratio of 2:1. Though the remnant polarization of the film obtained at 525°C was very small, it was confirmed that the BiFeO3 film had ferroelectricity.
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