Evaluation of MESFET structures from temperature-dependent Hall effect measurements

Abstract

We report on temperature-dependent Hall effect measurements performed on a multilayer, epitaxial, 4H–SiC MESFET structure. On the lightly doped (1.5 × 1017 cm–3) active layer activation energies of Edh = 62 meV and Edk = 88 meV have been obtained by fitting the Hall mobility and carrier concentration vs. temperature. On the more heavily doped contact layer, we show that the experimental results have to be discussed in the framework of a two-layers system. Different approaches are comparatively evaluated to extract the mobility and carrier concentration vs. temperature from the experimental data.