Evaluation of ma-N 2400 series DUV photoresist for electron beam exposure

Abstract

Several DUV positive and negative tone resists were developed for the photolithography at wavelengths of 248 nm and shorter. Most of these DUV photoresists are sensitive to electron beam exposure, too. In this paper the results of electron beam exposure of the negative tone ma-N 2400 series DUV photoresist will be presented. This resist has no chemical amplification and no critical process steps. Further, the resist provides a good resistivity to plasma etching processes, so that it can be used successfully for etch and lift-off processes. The necessary exposure doses for the resist layers spincoated with thicknesses between 0.3 and 0.8 @mm on silicon wafers were in the range between 60 and 120 @mC/cm^2. The exposed resist was developed with the metal ion free developer MIF 726. Patterns down to the low submicrometer region were generated. Developing properties, sensitivities and resolution of the electron beam exposed ma-N 2400 series resist tested under various conditions will be presented.