Abstract
Methods for evaluating low-frequency noise, such as 1/f noise and random telegraph noise, and evaluation results are described. Variability and fluctuation are critical in miniaturized semiconductor devices because signal voltage must be reduced in such devices. Especially, the signal voltage in multi-bit memories must be small. One of the most serious issues in metal-oxide-semiconductor field-effect-transistors (MOSFETs) is low-frequency noise, which occurs when the signal current flows at the interface of different materials, such as SiO2/Si. Variability of low-frequency noise increases with MOSFET shrinkage. To assess the effect of this noise on MOSFETs, we must first understand their characteristics statistically, and then, sufficient samples must be accurately evaluated in a short period. This study compares statistical evaluation methods of low-frequency noise to the trend of conventional evaluation methods, and this study’s findings are presented.
Highlights
Low-Frequency Noise in metal-oxidesemiconductor field-effect-transistors (MOSFETs)Semiconductor devices have been basically progressed with the shrinking of MOSFETs, which are used as the key component in them
This is composed of MOSFETs measured in arrayed unit cells, vertical and horizontal shift registers for addressing measured MOSFETs, MOSFETs located on each column for current control of measured MOSFET, analog memories for storing the source voltage of the measured MOSFETs within one line, and a source follower circuit for amplifying the output signal
The root mean square (RMS) of the signal waveform is often used for the representaThe root mean square (RMS) of the signal waveform is often used for the representative tive parameter of noise the RMS
Summary
Semiconductor devices have been basically progressed with the shrinking of MOSFETs (metal-oxide-semiconductor field-effect-transistors), which are used as the key component in them. As the device size is reduced, the signal voltage of MOSFETs decreases. A decrease in signal voltage degrades the reliability of electronic circuits, including analog and digital devices. From EquaN noise where Eb and N0 represent signal and tions (4)Eand (6), the LER is given by the S/N ratio as follows [10]. Logic error errorrate rateasasa function a function number of signal electrons. √ Noise increases with device shrinkage becausebecause of a MOSFET, respectively. The conventional evaluations [33,34] because they mustunderstand be statistical phenomena by nature, and statistical analysisofis the noise in have performed with a few numbers, and thenofwe required to MOSFETs fully understand this phenomenon. Low-frequency noise this study. evaluation methods and evaluation results are described in this study
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