Abstract
The control of the critical current density ( J C) and the junction resistance ( R N) along the c axis of intrinsic Josephson junctions (IJJs) on a high- T C superconductor is very important for applying the IJJs to electronic devices. For controlling these junction parameters, we have clarified the relationship of J C, R N, and the carrier concentration in Bi 2Sr 2CaCu 2O 8+ δ whiskers by changing the carrier concentration with an annealing process. We determined the electrical transport characteristics of the IJJs. As a result, the J C increased, and the R N decreased systematically when the carrier concentration increased. The values of J C and R N could be controlled by a change in the carrier concentration.
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