Abstract
Metal-oxide-semiconductor field-effect transistor (MOSFET) devices were fabricated on high-index silicon (114) surfaces and their threshold voltage (Vth) and interface-states density (Dit) parameters were both evaluated for the first time. Even though MOSFET devices aligned at 0°, 30°, 60° and 90° off the equivalent [110] direction present two closely related average Vth values, Dit evaluation shows that for all channel orientations (0°, 30°, 60° and 90°), this high-index silicon (114) surface develops a high-quality interface with SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> in which few electrons are trapped so that Dit as low as 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">10</sup> cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-2</sup> eV <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-1</sup> can be obtained.
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