Evaluation of Industrial Poly(tert-butyl acrylate) insulated A p-channel Organic Field-Effect Transistor (PtBA-p-OFET)

Abstract

Poly(tert-butyl acrylate) (PTB-p-A) has been investigated as a promising insulator layer for p-channel organic field effect transistors (p-OFETs) using the p-type semiconductor Poly(3-hexylthiophene-2,5-diyl (P3HT) due to its favorable insulating properties, good film-forming ability and electrical charge separation properties. Top-gate, bottom-contact PTBA-p-OFET devices are fabricated with Indium Thin Oxide (ITO) source/drain electrodes and a P3HT organic semiconductor layer. The frequency-dependent capacitance of the PTBA-p-OFETs was studied through a plot to determine the key parameters, including the threshold voltage (VTh), field-effect mobility (μFET), and the current on/off ratio (Ion/off) of the device. The PTB-p- OFETs exhibit field-effect mobility value of 6.13x10-4 (cm2/V.s), an on/off current ratio of 1.11x102, and a threshold voltage of -15.8 V. The capacitance-frequency characteristics of the capacitor structure were analyzed and found to have as 7.6 nF/cm2 per unit area. This work presents PTBA as a promising for high-performance p-OFET applications.