Evaluation of InAs QWFET for Low Power Logic Applications

Abstract

An eighty nanometer gate length InAs quantum well field effect transistors has been fabricated and the digital characteristics were evaluated. The devices show a drain-source current of 1015 mA/mm and a peak gm of 1920 mS/mm at VDS = 0.5 V. The fT and fmax are 340 GHz and 220 GHz at VDS = 0.4 V, respectively. A low delay time (CtotalV/ION) of 0.54 ps was also achieved. These excellent results indicate the InAs devices are the great potential option for the future low-power logic applications at post-Si CMOS technology.