Abstract

An eighty nanometer gate length InAs quantum well field effect transistors has been fabricated and the digital characteristics were evaluated. The devices show a drain-source current of 1015 mA/mm and a peak gm of 1920 mS/mm at VDS = 0.5 V. The fT and fmax are 340 GHz and 220 GHz at VDS = 0.4 V, respectively. A low delay time (CtotalV/ION) of 0.54 ps was also achieved. These excellent results indicate the InAs devices are the great potential option for the future low-power logic applications at post-Si CMOS technology.

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