Abstract

200-mm stencil masks for electron beam projection lithography (EPL) have been developed. Since they are not so rigid as photomasks because of their structure, 200-mm wafers with about 8,000 membrane windows, new metrological techniques dedicated to stencil masks have be introduced. Image placement (IP) accuracy of an EPL mask is evaluated with a suspension-type electrostatic chuck introduced to a Leica LMS IPRO. The dynamic repeatability of global IP measurements was 27 nm (3σ). It was confirmed that global IP errors were reduced to 60 nm (3σ, max) by linear-term and gravity corrections.

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