Abstract
Junction temperature evaluation is a key parameter used to control a power module assembly. But measuring the junction temperature by thermo-sensitive electrical parameters (TSEPs) does not reveal the actual temperature of the semiconductor device. In this paper, a specific electronic board used to compare four common TSEPs of IGBT chips is presented. For this comparison, two dissipation modes are used: dissipation in active and saturation regions. In order to have referential measurements we carried out surface temperature measurements of IGBT chips with an infrared (IR) camera. A dedicated numerical tool is presented to estimate the mean surface temperature of active region. In the case of a single IGBT chip, the comparison between IR and TSEP measurements show that the best studied parameter (in terms of robustness and usability) is the gate emitter voltage.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
