Abstract
This paper presents a comprehensive, numerical simulation of the remote Coulomb scattering (RCS) in Ge pMOSFETs due to interfacial charges and dipole in the gate stack. Hole mobility is calculated using a relaxation time approximation that consistently accounts for intra and intersubband transitions and multisubband transport. Our results show that the RCS appreciably degrades the hole mobility at both low and high electric field region. Especially the remote dipole scattering plays a main role on the RCS. Moreover, we discuss the dependence of hole mobility on interlayer GeO2 thickness, and possible benefits in terms of the RCS limited mobility by using an interlayer with higher dielectric constant.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.