Evaluation of high dose, high energy boron implantation into Cz substrates for epi-replacement in CMOS technology

Abstract

We implanted high energy boron to create a heavily doped ground plane in Cz wafers in order to replace p/p/sup +/ episubstrates in deep submicron complementary metal-oxide semiconductor (CMOS) technology. Devices manufactured on Cz wafers with a 1.5 or 1.6 MeV, 1/spl times/10/sup 15/ cm/sup -2/ boron implanted ground plane have superior latch-up immunity as compared to devices on epiwafers. Improvements in latch-up suppression were observed for all isolation spacings. Diode leakage was lower in high dose buried-layer substrates than in episubstrates, while gate oxide integrity was equivalent. For the first time, buried layer substrates have been shown to duplicate or exceed the performance of episilicon simultaneously for all relevant CMOS transistor and circuit parameters.