Abstract
This work examines the effects of heavy-ion impact under temperature variation. A NMOS device in 32nm bulk and 28nm FDSOI were analysed through TCAD simulations. In order to overcome the temperature effects, both devices were conducted to the Zero Temperature Coefficient (ZTC) condition. The results demonstrate a reduction from 5% up to 18% on the total collected charge and lower variation due to temperature fluctuation when the devices are operating in ZTC condition.
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