Abstract
To realize large-format compact array detectors covering a wide far-infrared wavelength range up to 200 µm, we have been developing Blocked-Impurity-Band (BIB) type Ge detectors with the room-temperature surface-activated wafer bonding technology provided by Mitsubishi Heavy Industries. We fabricated various types of <TEX>$p^+-i$</TEX> junction devices which possessed a BIB-type structure, and evaluated their spectral response curves using a Fourier transform spectrometer. From the Hall effect measurement, we also obtained the physical characteristics of the <TEX>$p^+$</TEX> layers which constituted the <TEX>$p^+-i$</TEX> junction devices. The overall result of our measurement shows that the <TEX>$p^+-i$</TEX> junction devices have a promising applicability as a new far-infrared detector to cover a wavelength range of <TEX>$100-200{\mu}m$</TEX>.
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