Abstract
The switched dose rate technique has been proposed as an accelerated test technique for enhanced low-dose-rate sensitivity. The physical mechanisms at play when this technique is applied are investigated in this paper. The variation of N <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ot</sub> and N <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">it</sub> is characterized using gated lateral pnp transistors to understand the kinetics of device degradation related to differences in mechanisms between high dose rate and low dose rate irradiations.
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