Evaluation of Effect of Mechanical Stress on Stacking Fault Expansion in 4H-SiC P-i-N Diode

Abstract

Single Shockley stacking faults (SSFs) expand from basal plane dislocations (BPDs) under forward current operation of 4H-SiC bipolar devices, giving rise to a reliability deterioration mode called “bipolar degradation”. Several groups have proposed models for the expansion of SSFs, in which the SSFs expand when electron-hole pair recombination takes place at BPDs. Maeda proposed a formulation of SSF expansion that includes stacking fault energy. However, the mechanisms by which mechanical stress affects the expansion of SSFs are unclear. In this paper, we evaluated the “expansion threshold current” of bar-shaped SSFs in a mechanical stress field using a p-i-n diode fabricated on 4H-SiC. To confirm the effect of mechanical stress on the threshold current for bar-shaped SSF expansion, a SiC-p-i-n diode was evaluated by the four-point bending method. Experimental results show that the threshold current of SSFs decreases or increases by more than 100 A/cm2 depending on the direction of the applied stress of SSFs. This result indicates that mechanical stress is an important factor for SiC bipolar device design.