Abstract
Double-sided planetary grinding as an efficient and precise machining method is used for the rapid thinning and flattening process of sapphire substrate. As an intermediate processing technology of sapphire substrate preparation procedure, many experiments are carried out to evaluate the lapping effect in the paper. Surface quality, processing efficiency, and surface dent depth, which all impact subsequent polishing processes, are evaluated. Firstly, the four stages of grinding process are analyzed to display the surface accuracy changing process of the sapphire substrates during grinding. Secondly, the effect of three main grinding parameters (grinding pressure, rotation speed of the grinding wheels, and the grain size of grinding wheels) on surface accuracy and processing efficiency are investigated. Finally, sapphire removal rate of about 10 µm/min is achieved easily at the optimized condition with a good surface quality by double-sided planetary grinding. The double-sided planetary grinding with the ceramic-bonded diamond wheel is suitable for the rapid thinning and flattening of the sapphire substrate.
Highlights
Sapphire that consists of single crystal Al2 O3 has been widely used for GaN-based epitaxial layers in light emitting diode (LED) application because of its good light transmission, high temperature stability, and high chemical resistance
A lot of valuable theoretical guidance was provided for the processing of large size silicon wafers [16,17], and research results proved that self-rotation grinding could help achieve good surface quality and surface shape accuracy
The results would provide an experimental basis for the industrial application of double-sided planetary grinding on sapphire substrates
Summary
Sapphire that consists of single crystal Al2 O3 has been widely used for GaN-based epitaxial layers in light emitting diode (LED) application because of its good light transmission, high temperature stability, and high chemical resistance. Most of the research mainly focuses on the self-rotation grinding of large wafers with fine diamond cup wheels. A lot of valuable theoretical guidance was provided for the processing of large size silicon wafers [16,17], and research results proved that self-rotation grinding could help achieve good surface quality and surface shape accuracy. The double-sided planetary grinding using fixed fine diamond wheel was proposed to flatten the sapphire substrate in this paper. This kind of grinding has the same motion as the double-side lapping with free abrasives [25]. The results would provide an experimental basis for the industrial application of double-sided planetary grinding on sapphire substrates
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