Abstract
Dissolved oxygen concentration of silicon wafers were evaluated by measuring infrared absorption of dissolved oxygen in attenuated total reflection (ATR) spectra of silicon wafers and compared with transmission-based evaluation. ATR peak height and the correlation between ATR and transmission was significantly stronger after chemical-mechanical polishing of both sides of wafers to 450 ± 10 µm. The results also indicate that the quantitative evaluation of the oxygen concentration of thin silicon wafers can be done by ATR measurements with appropriate preprocessing.
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