Abstract
The density of dislocations generated on a silicon substrate in a groove structure is measured. In addition, the effects of the topographical structure and isolation groove oxidation conditions are investigated. Results show that the generation of dislocations greatly depends on the shape of the groove and the oxidation temperature. These results can be interpreted as being due to both the effect of the stress concentration during selective oxidation in the groove and the viscous flow of a film. Also studied are suitable structure and process conditions for U‐groove isolation by making use of the experimental results and stress analysis. Finally, an optimum groove structure for device isolation is proposed, and its merits and availability are confirmed.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
