Evaluation of Densities and Energy Levels of Donors and Acceptors in Compensated Semiconductor from Temperature Dependence of Majority Carrier Concentration

Abstract

An accurate evaluation of densities and energy levels of donors and acceptors in a compensated semiconductor from the temperature dependence of the majority carrier concentration n(T) is carried out by modifying the graphic method proposed in Jpn. J. Appl. Phys. 35 (1996) L555. The introduced function, S(T,E ref), is defined as S(T,E ref) ≡n(T) exp (E ref/kT)/kT, where k is the Boltzmann constant and E ref is the newly introduced parameter. From the dependence of S(T,E ref) on the impurity density of minority carriers, the densities and energy levels of donors and acceptors can be determined accurately.