Abstract
The electrooptical sampling technique is used to assess the electrical behavior of Ohmic contact regions in GaAs. For this purpose unique Ohmic contact coplanar waveguides were fabricated and tested. A reduced electrooptical sampling signal is detected in certain Ohmic contact regions. Since the electrical fields present in this device are known a priori, the deviation of the electrooptical signal from its nominal value is attributed to a deviation in the electrooptical coefficient. Defects introduced during the annealing step of the Ohmic contact accelerated by existing dislocations are discussed as a mechanism capable of disrupting the electrooptic coefficient. A simple phenomenological diffusion model is presented to explain the mechanism responsible for the nulling of the electrooptical coefficient.
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