Abstract
Quasi-rheotaxial growth has been studied in p-type CdTe polycrystalline thin films grown by co-evaporation on Bi coated substrates. The thin film crystalline and electrical properties have been investigated as a function of growth temperature using SEM, X-ray and surface photovoltage techniques. Quantitative measurements of the grain size, orientation and minority carrier diffusion length indicate that material grown by this technique is suitable for photovoltaic applications provided the growth temperature and substrate preparation are well controlled. The results indicate that further improvement in film quality could be obtainable if quasi-rheotaxy could be utilised at higher growth temperatures.
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