Abstract
Abstract Diamond films of different quality are deposited on copper and silicon, respectively. Biaxial stress in the films is investigated using Raman spectroscopy. It is shown that, with an increase in the film thickness, the diamond Raman line shifts from higher wave numbers to the stress-free value of 1332 cm −1 , implying a decrease in the biaxial stress. This stress-relief behavior is also deduced from the theory of elasticity, which indicates that the in-plane stress changes linearly along the film growth direction. However, the diamond films of lower quality show a faster relaxation in the stress, while the films of better quality exhibit a slower relaxation. The different behavior is discussed in terms of different microstructure and quality of the films.
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