Abstract
We examined a concentration of Bi defects in layered BiCh2 based superconductors LnO1-xFxBiCh2 (Ln = La, Ce, Nd Ch = S, Se). These materials show superconductivity by electron carrier doping into BiCh2 layer. Since Bi defects affect the carrier concentration directly, an examination of the concentration is important to evaluate an actual carrier concentration. In this paper, the concentration of Bi defects on the BiCh2 layers in BiCh2 based superconductors was evaluated by scanning tunneling microscopy measurements in real space. We found the samples with BiSe2 layers have less Bi defects than those with BiS2 layers. Furthermore, the concentration of Bi defects was found to be almost constant regardless of F concentration and Ln ion.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
