Evaluation of Barrier Width by Low-Frequency Capacitance Measurements for MoO3-doped p-Type C60 Films

Abstract

The Schottky barrier width (Wdep) formed at MoO3-doped p-type C60/Ag interface was evaluated by low-frequency capacitance measurements. At relatively low-doped concentration of 3000 ppm, Wdep was determined to 57 nm and the clear rectification behavior was observed. On the other hand, at heavily-doped concentration of 10000 ppm, Wdep shrunk to 23 nm and the quasi-ohmic behavior due to the tunneling current was observed. Heavy doping technique can be applied to the fabrication of ohmic C60/metal contact.