Abstract
The SnInZnO thin film was prepared at room temperature by RF magnetron sputtering. The band gap of this film was investigated by REELS and UV-Spectrometer analysis. The surface morphology and the root mean square (RMS) roughness of SnInZnO thin films measured using atomic force microscopy (AFM). By using REELS with low energy (500 eV) and high energy (1500 eV) electron beams, the surface band gap as well as and the bulk energy band gap were measured. In addition, the surface roughness was evaluated by atomic force microscopy. The result shows that the band gaps are affected by the primary electron energies. The transmittance value of 80% in the visible light region has been achieved. The optical band gap was calculated by using Tauc’s relation from UV-Spectrometer analysis and compared to that of the band gap obtained by the REELS spectra.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: IOP Conference Series: Materials Science and Engineering
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
