Abstract
We evaluated the anisotropic biaxial strain in the channel region of extremely-thin body silicon-germanium-on-insulator p-MOSFETs by oil-immersion Raman spectroscopy. Oil-immersion Raman spectroscopy can measure the transverse optical (TO) phonon mode which cannot be detected by conventional Raman spectroscopy under the backscattering configuration for (001) substrate. Therefore, we can calculate the anisotropic biaxial stress in the SiGe channel region and investigate the channel width dependence of stress. From the Raman spectra obtained in the polarization configurations of longitudinal optical (LO)-active and TO-active, we confirmed that compressive stress is induced in the SiGe channel region. In addition, we observed that the strain state of the SiGe channel region becomes quasi-uniaxial strain by narrowing the channel width.
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