Abstract
We have evaluated an antifuse technology used in a novel three-dimensional one-time-programmable (3D-OTP) nonvolatile solid-state memory. The 3D-OTP memory uses deposited polysilicon antifuse sandwiches to build its memory cells. The polysilicon based SiO/sub 2/ antifuse show different breakdown characteristics compared to conventional traditional gate oxides. Long-term storage tests show that this 3D-OTP solid-state memory not only can be a general purpose ROM, but also can be an ideal media for archiving.
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