Abstract
We attempted to evaluate the role of tunneling oxide in a magnetic tunneling junction (MTJ) cell using scanning probe microscopy (SPM). In particular, we focused on the variation in the thickness uniformity of aluminum oxide thin film, thereby correlating the topology with its current image. The local I-V measurement revealed that a preferred current conduction through thinner aluminum oxide exists. The cross-sectional image confirmed that the variation in the thickness of aluminum oxide creates weak points for current conduction. Finally, we could obtain a tenfold the MR value in the MTJ cell by improving the thickness uniformity of the aluminum oxide thin film.
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