Evaluation of a new Ba precursor, Ba(DPM) 2-2tetraen, for MOCVD of oxide superconductors

Abstract

Metalorganic sources of Ba are very important in preparing perovskite thin films by metalorganic chemical vapor deposition (MOCVD). We evaluated a new Ba precursor, Ba(DPM) 2-2tetraen. It has a much higher volatility than conventional Ba(DPM) 2. The supply rate of Ba can be kept constant for 130 h, by optimizing the MOCVD conditions. Using this precursor, high-quality YBa 2Cu 3O x thin films were grown , with T c>80 K, good crystallinity (Rutherford backscattering spectroscopy, χ min=2.6%) and good surface morphology with no precipitates.