Abstract
As feature sizes of semiconductor device structures have continuously decreased, needs for metrology tools with high precision and excellent linearity over actual pattern sizes have been growing. And it has become important to measure not only two-dimensional (2D) but also three-dimensional (3D) shapes of patterns at 22 nm node and beyond. To meet requirements for 3D metrology capabilities, various pattern metrology tools have been developed. Among those, we assume that CDSEM metrology is the most qualified candidate in the light of its non-destructive, high throughput measurement capabilities that are expected to be extended to the much-awaited 3D metrology technology. On the basis of this supposition, we have developed the 3D metrology system, in which side wall angles and heights of photomask patterns can be measured with high accuracy through analyzing CDSEM images generated by multi-channel detectors. In this paper, we will discuss our attempts to measure 3D shapes of defect patterns on a photomask by using Advantest's Multi Vision Metrology SEM E3630 (MVM-SEM E3630).
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