Abstract
In this paper, a comparison between CMOS and MOSFET base circuits HSPICE is done with software. 0.13 CMOS transistor model for simulation and CNTFET Model of Stanford University used. In simulations amounts of power, circuit delay and PDP is calculated and these values were compared at the end. And tried to CNTFET applications of transistors in circuit design, including memory and logic circuits Ternary be expressed.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
More From: Journal of Research in Science, Engineering and Technology
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.