Evaluation and Analysis of Temperature-Dependent Dynamic $R_{{{\mathrm{DS}}},{{\mathrm{ON}}}}$ of GaN Power Devices Considering High-Frequency Operation

Abstract

Commercial enhancement-mode gallium nitride (GaN) HEMTs device is a superior candidate for high-frequency power electronics applications. However, GaN power devices have a unique dynamic ${R}_{{\mathrm{\scriptscriptstyle DS},\mathrm{\scriptscriptstyle ON}}}$ problem which increases the conduction loss of the converter during operation. In this article, the temperature-dependent dynamic ${R}_{{\mathrm{\scriptscriptstyle DS},\mathrm{\scriptscriptstyle ON}}}$ at high frequency is evaluated experimentally for the first time using the double-pulse test (DPT) and multiple-pulse test (MPT) techniques. Different temperature-dependent dynamic ${R}_{{\mathrm{\scriptscriptstyle DS},\mathrm{\scriptscriptstyle ON}}}$ characteristics between the DPT and the MPT at high temperatures are investigated. The significance of the dynamic ${R}_{{\mathrm{\scriptscriptstyle DS},\mathrm{\scriptscriptstyle ON}}}$ ’s temperature dependence is important since GaN devices are typically operating at elevated temperatures. The results suggest that the traditional wafer-level test method using one pulse or two pulses and the MPT without heating consideration or at lower pulse frequency may not be sufficient to evaluate the dynamic ${R}_{\mathrm{\scriptscriptstyle DS},\mathrm{\scriptscriptstyle ON}}$ effect. Combined with high-frequency, high-voltage, and high-current stress, high operating temperatures result in severe ${R}_{\mathrm{\scriptscriptstyle DS},\mathrm{\scriptscriptstyle ON}}$ degradation; hence, there is a diminished return on operating the devices at high temperatures.