Abstract
The total-dose response of gated lateral PNP transistors is presented for the first time for the various enhanced low-dose-rate sensitivity (ELDRS)-related test conditions of Mil-STD 883F Test Method 1019.6. We compare the PNP results to those of NPN transistors from ELDRS test chips manufactured at National Semiconductor Corporation (NSC). These data provide a physical basis for the limitations placed on the TM1019.6 ELDRS tests and confirm the conservative nature of these tests for the NSC ELDRS process.
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