Evaluating Switching Performance of GaN HEMT Using Analytical Modeling

Abstract

Evaluating switching performance of the gallium nitride high electron mobility transistor (GaN HEMT) is critical for its application in power converter/inverter. In this work, we have elaborated an analytical model aims to comprehensively estimate switching characteristics of GaN HEMT. The model has considered nonlinear junction capacitance as well as forward and reverse transconductance, skin effect during oscillation period, and interactions between high- and low-side GaN HEMTs. As a result, the switching losses, switching oscillation, and crosstalk issue during switching transient can be correctly reflected together. Comparisons between measured and calculated waveforms manifest that the model can evaluate switching performance of the GaN HEMT in sufficient accuracy when compared with other models. Consequently, the model can give many valuable design references in applying GaN HEMT.