Evaluating Possibilities of Self-propagating High-temperature Synthesis (SHS) for Substitution of Ge for Si in MoSi2

Abstract

Abstract Self-propagating high-temperature synthesis is used to study materials obtained from a Mo–Si–Ge system. Si1−xGex is known to be one of the most efficient thermoelectrics, but its use is limited by high price and scarcity of germanium, relatively low value of its ZT, and high working temperature. One way to increase its ZT consists of increasing the diffusion of the acoustic phonons by inserting silicide nanoinclusions of MoSi2 inside the Si1−xGex matrix. In this sense it is important to study the Mo(Si1−xGex)2 solid solutions.