Abstract

Extreme-ultraviolet (EUV) spectra of ${\mathrm{Sn}}^{13+}\ensuremath{-}{\mathrm{Sn}}^{15+}$ ions have been measured in an electron-beam ion trap (EBIT). A matrix inversion method is employed to unravel convoluted spectra from a mixture of charge states typically present in an EBIT. The method is benchmarked against the spectral features of resonance transitions in ${\mathrm{Sn}}^{13+}$ and ${\mathrm{Sn}}^{14+}$ ions. Three new EUV lines in ${\mathrm{Sn}}^{14+}$ confirm its previously established level structure. This ion is relevant for EUV nanolithography plasma but no detailed experimental data currently exist. We used the Cowan code for first line identifications and assignments in ${\mathrm{Sn}}^{15+}$. The collisional-radiative modeling capabilities of the Flexible Atomic Code were used to include line intensities in the identification process. Using the 20 lines identified, we have established 17 level energies of the $4{p}^{4}4d$ configuration as well as the fine-structure splitting of the $4{p}^{5}$ ground-state configuration. Moreover, we provide state-of-the-art ab initio level structure calculations of ${\mathrm{Sn}}^{15+}$ using the configuration-interaction many-body perturbation code ambit. We find that the here-dominant emission features from the ${\mathrm{Sn}}^{15+}$ ion lie in the narrow 2% bandwidth around 13.5 nm that is relevant for plasma light sources for state-of-the-art nanolithography.

Highlights

  • Extreme-ultraviolet (EUV) light emission near 13.5 nm wavelength from highly charged tin ions, primarily from 4p−4d and 4d−4 f transitions in Sn8+−Sn14+, is the source of light for state-of-the-art nanolithography [1,2,3,4,5]

  • A wavelength range from 12.6–20.8 nm is captured in the observation of light diffraction in first order of the grating, with lines having a full width at half maximum (FWHM) of about 0.03 nm

  • This procedure allows for the assessment of ranges of electron-beam energies in which tin ions in a specific charge state are the dominant contributors to the EUV spectra

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Summary

INTRODUCTION

Extreme-ultraviolet (EUV) light emission near 13.5 nm wavelength from highly charged tin ions, primarily from 4p−4d and 4d−4 f transitions in Sn8+−Sn14+, is the source of light for state-of-the-art nanolithography [1,2,3,4,5]. We employ a matrix inversion method to obtain chargestate-resolved spectra using matrix inversion techniques on convoluted, mixed-charge-state EUV spectra experimentally obtained from an electron-beam ion trap. We focus here on the EUV spectra of Sn13+−Sn15+ Their strongest line features are closely spaced and offer a rather tractable atomic structure with a relatively limited number of strong transitions. Its performance is gauged against published calculations as well as experimental observations

EXPERIMENT
GENERAL FEATURES OF THE EUV EMISSION MAPS
MATRIX INVERSION
RESULTS AND LINE
Literature
CONCLUSION
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